ENPI / e-JIKEI Network Promotion Institute

Journal of Mechanical and Electrical Intelligent System (JMEIS, J. Mech. Elect. Intel. Syst.)

An international open-access peer-reviewed journal

ISSN 2433-8273

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Vol.6, No.2

TABLE OF CONTENTS

Articles

Vibration-sensing-actuation device for pipe diagnosis using in-plane bending vibration mode

Soichiro Takata, Riki Tanahashi, Shuya Kubota, and Naoko Watanabe

Journal of Mechanical and Electrical Intelligent System, Vol.6, No.2, pp.1-9, 2023.

Abstract: Infrastructure built in the 1950s has deteriorated beyond its service life. However, replacing all infrastructure is difficult and involves huge replacement costs. The optimization of maintenance and participation of various maintenance stakeholders is required. In this paper, we propose a prototype to improve maintenance technology and social cognition. However, technological issues exist, such as a lack of high-reliability diagnoses, optimized maintenance scheduling, and repair methods. In particular, high-reliability diagnosis is focused on herein. Communication of information between stakeholders and infrastructure is essential to improve social cognition in terms of infrastructure deterioration. In this paper, a communication function between the residents and infrastructure is referred to as “future intelligent infrastructure.” We demonstrate a vibration-sensing-actuation device for the future intelligent infrastructure. In particular, we focus on the vibration-sensing-actuation device for pipe diagnosis using an in-plane bending vibration mode. First, a prototype of the vibration-sensing-actuation device is developed. The device is constructed from an IoT sensor module, an electrical relay circuit, a white noise generator, a pipe, and an electrodynamic exciter and a fundamental operation test is performed. As a result, ring vibrations and the fluctuation of the sampling period is observed. Moreover, the theoretical analysis based on the continuum and random vibration theories is conducted. As a result, the fitting model of the acceleration distribution was obtained. Finally, a diagnosis simulation is conducted using the fitting model of the acceleration distribution and the diagnosis algorithm is proposed based on the recursive root mean square value.

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N-Doped GeTe for Phase-Change Device with High Reliability

Shunsuke Yahagi and You Yin

Journal of Mechanical and Electrical Intelligent System, Vol.6, No.2, pp.10-14, 2023.

Abstract: Phase change chalcogenide materials are widely used in optical disks, memories and artificial synapses. However, a huge volume change of 5~10% is usually exhibited in conventional phase-change materials such as GeTe and Ge₂Sb₂Te₅ when phase change occurs. This often results in a bad reliability of phase-change memory or artificial synapse. Here, the N-doped GeTe was systematically investigated to improve the reliability. The volume change upon crystallization of an N-doped GeTe film greatly reduced after doping an appropriate amount of N. According to I-V curves of the fabricated devices, the N-doped GeTe device exhibited better performance than undoped one.

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